价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMP2123L-7 | 2,862 | 5 | Cut Tape | ||||||||
| TME | DMP2123L-7 | 0 | 1 | 21h | ||||||||
| Avnet | DMP2123L-7 | 0 | 3K | 10h | ||||||||
| RS (Formerly Allied Electronics) | DMP2123L-7 | 0 | 250 | Bulk | 1d | |||||||
| Future Electronics | DMP2123L-7 | 0 | 3K | Tape & Reel |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMP2130L-7
P-Channel 20 V 75 mOhm 7.3 nC Surface Mount Enhancement Mode Mosfet - SOT-23
VishaySI2302CDS-T1-E3
MOSFET, N CH, 20V, 2.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 Diodes Inc. DMP2123L-7 的描述。
P-Channel 20 V 72 mO Surface Mount Enhancement Mode Mosfet - SOT-23
Power MOSFET, P Channel, 20 V, 3 A, 0.072 ohm, SOT-23, Surface Mount
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, 20V, 3A, SOT-23 ROHS COMPLIANT: YES
1.4W(Ta) 12V 1.25V@ 250¦ÌA 7.3nC@ 4.5 V 1P 20V 72m¦¸@ 3.5A,4.5V 3A 443pF@16V SOT-23-3 2.9mm*1.3mm*1.03mm
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGS
Diodes Inc SCT
MOSFETs 20V 3.00 x 1.40mm SMT SOT23 3A P-Channel
Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
90004001,场效应管, MOSFET, P沟道, 20V, 3A, 150度 C, 1.4W;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance72 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance443 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.4 W
Rds On Max72 mΩ
Resistance72 mΩ
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time12 ns
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm