价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFSL9N60APBF-ND | 641 | 1 | Tube | ||||||||
| TME | IRFSL9N60APBF | 0 | 1 | 22h | ||||||||
| TTI | IRFSL9N60APBF | 0 | 1K | Tube | 2d | |||||||
| Newark | IRFSL9N60APBF | 0 | 1K | |||||||||
| Future Electronics | IRFSL9N60APBF | 0 | 50 | Tube |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-12-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Vishay IRFSL9N60APBF 的描述。
Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262)
Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262
170W(Tc) 30V 4V@ 250¦ÌA 49nC@ 10 V 1N 600V 750m¦¸@ 5.5A,10V 9.2A 1.4nF@25V I2PAK 10.67mm*4.83mm*9.65mm
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
NCHAN, SMD-220, 600V IRFSL9N60APBF
MOSFET, N CH, 600V, 9.2A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation170 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm