onsemi FQI10N60CTU
$ 0.99
Obsolete
相关零件
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N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
onsemiFQI9N50CTU
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FQI10N60CTU 的描述。
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 600V 9.5A I2PAK
MOSFETs 600V N-Channel Adv Q-FET C-Series
N-CHANNEL POWER MOSFET
N-CH/600V/10A/QFET C-SERIES
MISCELLANEOUS MOSFETS;
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)9.5 A
Current Rating9.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance730 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.04 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max730 mΩ
Rise Time69 ns
Turn-Off Delay Time144 ns
Voltage Rating (DC)600 V