相关零件
STMicroelectronicsSTB10NK60Z-1
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
onsemiFQI12N60CTU
3.13W(Ta),225W(Tc) 4V@ 250¦ÌA 63nC@ 10V 1N 600V 650m¦¸@ 6A,10V 2.29pF@25V I2PAK,TO-262
描述
由其分销商提供的 onsemi FCI11N60 的描述。
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Rail
125W(Tc) 5V@ 250¦ÌA 52nC@ 10V 1N 600V 380m¦¸@ 5.5A,10V 1.49pF@25V I2PAK,TO-262
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 600V, NCH, MOSFET
600V N-Channel SuperFET
TEW CREATED FOR SUZHOU <AZ
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time98 ns
Turn-Off Delay Time119 ns
Voltage Rating (DC)600 V