价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STI10N62K3 | 0 | 1 | 1d | ||||||||
| element14 APAC | STI10N62K3 | 0 | 1 | 1d | ||||||||
| Microchip USA | STI10N62K3 | 1,757 | 600 | Tube | 5h | |||||||
| Win Source | WS-STI10N62K3 | 4,280 | 30 | 13h | ||||||||
| Worldway Electronics | STI10N62K3 | 22,161 | 7 | Tube | 12h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
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N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
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描述
由其分销商提供的 STMicroelectronics STI10N62K3 的描述。
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package
STI10N62K3 N-channel MOSFET Transistor, 8.4 A, 620 V, 3-Pin I2PAK
MOSFET N-CH 620V 8.4A I2PAK / N-Channel 620 V 8.4A (Tc) 125W (Tc) Through Hole I2PAK
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 60V, 8.4A, I2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 0.68ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.25 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max750 mΩ
Rise Time15 ns
Threshold Voltage3.75 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14.5 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm