供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay IRFBE30PBF 的描述。
IRFBE30PBF N-CHANNEL MOSFET TRANSISTOR, 4.1 A, 800 V, 3-PIN TO-220AB
Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 800V 4.1A 3-Pin (3+Tab) TO-220AB
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)4.1 A
Current48 A
Current Rating4.1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max3 Ω
Recovery Time720 ns
Resistance3 Ω
Rise Time33 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time82 ns
Turn-On Delay Time12 ns
Voltage800 V
Voltage Rating (DC)800 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm