价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FQP5N60C | 80 | 6d | |||||||||
| Microchip USA | FQP5N60C | 320 | 150 | Tube | 13h | |||||||
| Component Stockers USA | FQP5N60C | 111,954 | 11h | |||||||||
| Win Source | WS-132608 | 940 | 40 | 22h | ||||||||
| Worldway Electronics | FQP5N60C | 9,037 | 7 | Tube | 21h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-25
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
相关零件
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MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
描述
由其分销商提供的 onsemi FQP5N60C 的描述。
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220
N-Channel 600 V 2.5 Ohm Through Hole Mosfet - TO-220
N CHANNEL MOSFET, 600V, 4.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:600V; On
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time42 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)600 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm