Vishay IRFBC30PBF

Name: Vishay IRFBC30PBF
Brand: Vishay
SKU: IRFBC30PBF

Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB

$ 1.425

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)	2	IRFBC30PBF	0	1K	Bulk				2.750	2.480	18h
TTI Asia		IRFBC30PBF	联系方式						1.060	0.940	5h
Farnell	2	IRFBC30PBF	0	1		1.893*	1.512*	1.512*	1.512*	1.512*	1d
element14 APAC		IRFBC30PBF	0	1		1.936*	1.398*	1.106*	0.778*	0.726*	14h
Win Source		WS-IRFBC30PBF	50,000	70				0.750	0.500	0.500	2h

数据表和文档

下载 Vishay IRFBC30PBF 的数据表和制造商文档。

IHS

Datasheet8 页2 年前

Datasheet9 页14 年前

Farnell

element14 APAC

Newark

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-5.86%

CAD 模型

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来源	eCAD	mCAD	文件
Ultra Librarian	符号封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1990-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-04

LTD Date2025-05-04

描述

由其分销商提供的 Vishay IRFBC30PBF 的描述。

Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB

Future Electronics

IRFBC30PBF N-CHANNEL MOSFET TRANSISTOR, 3.6 A, 600 V, 3-PIN TO-220AB

RS (Formerly Allied Electronics)

MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W

Distrelec

POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

Farnell