供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Vishay IRFBF30PBF 的描述。
Single N-Channel 900 V 3.7 Ohms Flange Mount Power Mosfet - TO-220AB
POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220 900V 3.6A; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Resistance3.7 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max3.7 Ω
Resistance3.7 Ω
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time14 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm