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Manufacturer Lifecycle StatusACTIVE (Last Updated: 7 hours ago)
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POWER FIELD-EFFECT TRANSISTOR, 1 / N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
描述
由其分销商提供的 Texas Instruments CSD18535KCS 的描述。
60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube
300W(Tc) 20V 2.4V@ 250µA 81nC@ 10 V 1individualNChannel 60V 2mΩ@ 100A,10V 200A 6.62nF@30V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.51mm
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Case/PackageTO-220
Contact PlatingCopper, Tin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)200 A
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.62 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Rds On Max2 mΩ
Rise Time3 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns
Dimensions
Height4.7 mm
Length10.16 mm
Thickness4.58 mm
Width8.7 mm