供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-12
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2018-10-03
LTD Date2019-04-03
相关零件
InfineonIPP057N06N3GXKSA1
MOSFET N-CH 60V 80A TO220-3 N-Channel 60 V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3
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MOSFET N-CH 60V 80A TO220-3 N-Channel 60 V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3
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MOSFET N-CH 60V 90A TO220-3 N-Channel 60 V 90A (Tc) 188W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP55NF06L
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
描述
由其分销商提供的 STMicroelectronics STP77N6F6 的描述。
N-channel 60 V, 0.0063 Ohm typ., 77 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 77A 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)77 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.3 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max7 mΩ
Schedule B8541290080