供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-06-18
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
相关零件
STMicroelectronicsSTP260N6F6
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
InfineonIPP024N06N3GXKSA1
POWER FIELD-EFFECT TRANSISTOR, 1 / N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
描述
由其分销商提供的 onsemi FDP025N06 的描述。
N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ
Trans MOSFET N-CH Si 60V 265A 3-Pin(3+Tab) TO-220 Tube
60 V, 265 A, 2.5 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 60V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:395W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.421 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time250 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.885 nF
Max Operating Temperature175 °C
Max Power Dissipation395 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3.5 V
Number of Elements1
Power Dissipation395 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time324 ns
Schedule B8541290080
Threshold Voltage3.5 V
Turn-Off Delay Time348 ns
Turn-On Delay Time134 ns
Dimensions
Height15.7 mm
Length9.9 mm
Width4.5 mm