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描述
由其分销商提供的 STMicroelectronics STL45N65M5 的描述。
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
STL45N65M5 N-channel MOSFET Transistor, 22 A, 710 V, 5-Pin PowerFLAT HV
MOSFET N-CH 650V 22.5A 4PWRFLAT / Low gate charge and input capacitance
MOSFET, N-CH, 650V, 22.5A, POWERFLAT; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)22.5 A
Drain to Source Resistance86 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time9.3 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.47 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.8 W
Rds On Max86 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time79.5 ns
Turn-On Delay Time79.5 ns
Dimensions
Height950 µm
Length8 mm
Width8 mm