供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-17
Lifecycle StatusProduction (Last Updated: 5 months ago)
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描述
由其分销商提供的 STMicroelectronics STL38N65M5 的描述。
STL38N65M5 N-channel MOSFET Transistor, 22 A, 650 V, 5-Pin PowerFLAT HV
N-channel 650 V, 0.09 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
Mosfet, N-Ch, 650V, 22.5A, Powerflat Hv Rohs Compliant: Yes |Stmicroelectronics STL38N65M5
Trans MOSFET N-CH 650V 3.5A 5-Pin Power Flat T/R
Power MOSFETs, 650V, 22.5A, PowerFLAT 8x8 HV, Tape and Reel
STMicroelectronics SCT
Power Field-Effect Transistor, 22.5A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Technical
Continuous Drain Current (ID)22.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.8 W
Rds On Max105 mΩ
Resistance105 mΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time9 ns
Turn-On Delay Time66 ns
Dimensions
Height950 µm
Length8 mm
Width8 mm