STMicroelectronics STB34N65M5

Name: STMicroelectronics STB34N65M5
Brand: STMicroelectronics
SKU: STB34N65M5

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package

$ 2.708

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Distributor		SKU		Min	Pkg
Newark		STB34N65M5	442	1	Cut Tape	5.280	5.280	5.280	5.280	5.280
DigiKey	2	497-13085-1-ND	350	1	Cut Tape	7.060	4.751	3.444	3.247	3.247
Avnet		STB34N65M5	0	1K					2.687	2.573	4d
Future Electronics		STB34N65M5	0	1K	Tape & Reel				3.590	3.540
Arrow Electronics		STB34N65M5	0	1K					2.653	2.653

数据表和文档

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IHS

Datasheet22 页13 年前

Components Direct

Future Electronics

库存历史记录

3 个月趋势:

-33.16%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-02-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB34N65M5 的描述。

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package

STMicroelectronics

STB34N65M5 N-channel MOSFET Transistor, 28 A, 710 V, 3-Pin D2PAK

RS (Formerly Allied Electronics)

190W(Tc) 25V 5V@ 250¦ÌA 62.5nC@ 10 V 1N 650V 110m¦¸@ 14A,10V 28A 2.7nF@100V D2PAK,TO-263

UnikeyIC

Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Farnell