Infineon IPL65R099C7AUMA1

Name: Infineon IPL65R099C7AUMA1
Brand: Infineon
SKU: IPL65R099C7AUMA1

Trans Mosfet N-ch 650V 21A 4-PIN Vson Ep T/r

$ 2.523

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPL65R099C7AUMA1	2,370					2.380	2.130	2.010	20h
DigiKey	3	448-IPL65R099C7AUMA1CT-ND	8,206	1	Cut Tape	6.510	4.365	3.148	2.916	2.916
Avnet		IPL65R099C7AUMA1	0	3K						2.576	4d
Future Electronics	2	IPL65R099C7AUMA1	0	3K	Tape & Reel					4.770
Arrow Electronics		IPL65R099C7AUMA1	0	3K						2.840

数据表和文档

下载 Infineon IPL65R099C7AUMA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

-0.83%

CAD 模型

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-11-05

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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描述

由其分销商提供的 Infineon IPL65R099C7AUMA1 的描述。

Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R

Verical

128W 20V 4V 45nC@ 10V 1N 650V 99m¦¸@ 10V 21A 2.14nF@ 400V SON , 8mm*8mm*1.1mm

UnikeyIC

Power Field-Effect Transistor, 21A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Increased MOSFET dv/dt ruggedness

Win Source

MOSFET HIGH POWER BEST IN CLASS

Digi-ic_SMART PIONEER

Mosfet, N-Ch, 650V, 21A, 128W, Vson; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPL65R099C7AUMA1

Newark

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon