STMicroelectronics STGP10NC60HD

Name: STMicroelectronics STGP10NC60HD
Brand: STMicroelectronics
SKU: STGP10NC60HD

STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

$ 0.787

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		STGP10NC60HD	647	1K					0.691	0.622	8h
Future Electronics	2	STGP10NC60HD	6,100	50	Tube			0.750	0.705	0.670
TME	2	STGP10NC60HD	284	1		2.601*	1.730*	1.495*	1.495*	1.495*	19h
Newark		STGP10NC60HD	0	1K					1.600	1.600
Arrow Electronics		STGP10NC60HD	0	1K					0.775	0.730

数据表和文档

下载 STMicroelectronics STGP10NC60HD 的数据表和制造商文档。

Newark

Datasheet19 页20 年前

TME

Farnell

Nu Horizons

Mouser

库存历史记录

3 个月趋势:

-72.33%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-30

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGP10NC60HD 的描述。

STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

Future Electronics

Trans IGBT Chip N-CH 600V 20A 65mW 3-Pin(3+Tab) TO-220AB Tube

Verical

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Semicontronic

IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

Farnell

IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC