IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
Igbt, To-220; Corriente De Colector Dc:15A; Tensión De Saturación Colector-Emisor Vce(On):2.5V; Disipación De Potencia Pd:56W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Stmicroelectronics STGP6NC60HD
Using the latest high voltage technology based on a patented strip layout, St Microelectronics has designed an advaced family of IGBTs, the PowerMESH(TM) IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.