Infineon IGP10N60TXKSA1

Name: Infineon IGP10N60TXKSA1
Brand: Infineon
SKU: IGP10N60TXKSA1

IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

$ 0.597

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Newark	IGP10N60TXKSA1	2,485	1		1.880	1.020	0.932	0.676	0.676
Arrow Electronics	IGP10N60TXKSA1	150	1		0.686	0.686	0.686	0.686	0.686
Rochester Electronics	IGP10N60TXKSA1	779					0.562	0.466	0.416	1h
DigiKey	IGP10N60TXKSA1-ND	503	1	Tube	1.780	1.780	0.757	0.597	0.597
Avnet	IGP10N60TXKSA1	0	1K							3h

数据表和文档

下载 Infineon IGP10N60TXKSA1 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

_legacy Avnet

库存历史记录

3 个月趋势:

+20.44%

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来源	eCAD	mCAD	文件
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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-10-07

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

描述

由其分销商提供的 Infineon IGP10N60TXKSA1 的描述。

IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3

Future Electronics

Trans IGBT Chip N-CH 600V 24A 110mW 3-Pin(3+Tab) TO-220AB Tube

Verical

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon

Igbt, Single, 600V, 24A, To-220; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:110W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IGP10N60TXKSA1

Newark