价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STGB30H60DFB | 1,000 | 1K | |||||||||
| Arrow Electronics | STGB30H60DFB | 1,000 | 1K | |||||||||
| TME | STGB30H60DFB | 0 | 1 | 3h | ||||||||
| Newark | STGB30H60DFB | 0 | 1 | Cut Tape | ||||||||
| Avnet | STGB30H60DFB | 0 | 1K | 17h |
备用零件
Price @ 1000
$ 1.076
$ 1.66
Stock
300,052
116,275
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
Collector Emitter Breakdown Voltage
600 V
600 V
Max Collector Current
60 A
60 A
Power Dissipation
-
-
Collector Emitter Saturation Voltage
1.55 V
1.55 V
Reverse Recovery Time
53 ns
-
相关零件
描述
由其分销商提供的 STMicroelectronics STGB30H60DFB 的描述。
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R
IGBT, SINGLE, 600V, 60A, TO-263; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)600 V
Forward Current30 A
Forward Voltage2 V
Max Breakdown Voltage600 V
Max Collector Current60 A
Max Power Dissipation260 W
Number of Elements1
PackagingTape and Reel
Reverse Recovery Time53 ns