Infineon IGB30N60H3ATMA1

Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(2+Tab) D2PAK T/R
$ 1.03
Production

价格与库存

数据表和文档

下载 Infineon IGB30N60H3ATMA1 的数据表和制造商文档。

Upverter

Datasheet14 页15 年前

IHS

库存历史记录

3 个月趋势:
+0.43%

CAD 模型

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供应链

Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-06
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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描述

由其分销商提供的 Infineon IGB30N60H3ATMA1 的描述。

Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(2+Tab) D2PAK T/R
Infineon IGB30N60H3ATMA1 IGBT, 60 A 600 V, 3-Pin PG-TO263-3, Through Hole
IGBT, 60 A, 1.95 V, 187 W, 600 V, TO-263 (D2PAK), 3 Pins
600 V HIGH SPEED IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
IGBT, SINGLE, 600V, 60A, TO-263; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins
Igbt, 600V, 60A, 175Deg C, 187W; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:187W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IGB30N60H3ATMA1

制造商别名

Infineon 在全球拥有多个品牌,分销商可将其用作替代名称。Infineon 也可称为以下名称:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号:

  • IGB30N 60H3
  • IGB30N60H3
  • SP000852240