备用零件
Price @ 1000
$ 1.181
Stock
78,725
257,463
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
Collector Emitter Breakdown Voltage
600 V
650 V
Max Collector Current
60 A
60 A
Power Dissipation
-
-
Collector Emitter Saturation Voltage
2.4 V
2 V
Reverse Recovery Time
110 ns
140 ns
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-29
LTD Date2018-12-29
相关零件
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Target Applications: Air Conditioner; Dryer; Fan; PFC; Pump; Solar; UPS; Washing Machine
描述
由其分销商提供的 STMicroelectronics STGB30H60DF 的描述。
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(2+Tab) D2PAK T/R
600 V, 30 A high speed trench gate field-stop IGBT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT Transistors IGBT & Power Bipolar
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.4 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation260 W
Min Operating Temperature-40 °C
Number of Elements1
PackagingTape & Reel (TR)
Reverse Recovery Time110 ns