供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-28
LTD Date2019-08-31
相关零件
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Trans IGBT Chip N-CH 600V 34A 100W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
描述
由其分销商提供的 Infineon IRGS4062DPBF 的描述。
Target Applications: Air Conditioner; Dryer; Fan; PFC; Pump; Solar; UPS; Washing Machine
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT Housing type: D2PAK Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.95 V Power dissipation: 250 W
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:250W
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.39037 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Fall Time41 ns
Max Collector Current48 A
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Reverse Recovery Time89 ns
Rise Time31 ns
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm