价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STD4NK80ZT4 | 2,500 | 2500 | Tape & Reel | ||||||||
| Newark | STD4NK80ZT4 | 4,897 | 1 | Cut Tape | ||||||||
| DigiKey | 497-8910-1-ND | 1,792 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STD4NK80ZT4 | 5,000 | 2500 | |||||||||
| Verical | STD4NK80ZT4 | 5,000 | 2500 |
备用零件
Price @ 1000
$ 0.935
$ 0.794
Stock
1,428,163
263,282
Authorized Distributors
6
6
Mount
Surface Mount
Through Hole
Case/Package
DPAK
TO-251-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
3 V
-
Rds On Max
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
80 W
80 W
Input Capacitance
575 pF
575 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 2 months ago)
相关零件
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
描述
由其分销商提供的 STMicroelectronics STD4NK80ZT4 的描述。
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
STD4NK80ZT4 N-channel MOSFET Transistor, 3 A, 800 V, 3-Pin DPAK
Power MOSFET, N Channel, 800 V, 3 A, 3.5 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Mosfet, N Channel, 800V, 3A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1.5A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):3Ohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Stmicroelectronics STD4NK80ZT4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance575 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation80 W
Rds On Max3.5 Ω
Resistance3.5 Ω
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)800 V
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm