STMicroelectronics STD4N80K5

Name: STMicroelectronics STD4N80K5
Brand: STMicroelectronics
SKU: STD4N80K5

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package

$ 0.695

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
DigiKey	3	497-14033-1-ND	1,976	1	Cut Tape	2.200	1.407	0.952	0.694	0.563
Newark		STD4N80K5	0	1	Cut Tape	2.290	1.550	1.120	0.895	0.895
Avnet		STD4N80K5	0	2500						0.540	14h
Future Electronics		STD4N80K5	0	2500	Tape & Reel					0.730
Arrow Electronics		STD4N80K5	0	2500						0.547

数据表和文档

下载 STMicroelectronics STD4N80K5 的数据表和制造商文档。

Newark

Datasheet23 页13 年前

Future Electronics

库存历史记录

3 个月趋势:

-10.36%

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics STD4N80K5 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STD4N80K5 的描述。

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package

STMicroelectronics

N-channel 800 V 3 A 2.5 Ohm Surface Mount Power MOSFET - TO-252-3

Future Electronics

STD4N80K5 N-channel MOSFET Transistor, 3 A, 800 V, 3-Pin DPAK

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 800V, 3A, 150DEG C, 60W; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell