onsemi FCD4N60TM

Name: onsemi FCD4N60TM
Brand: onsemi
SKU: FCD4N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

$ 0.909

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Distributor		SKU		Min	Pkg
Newark	2	FCD4N60TM	13,156	5	Cut Tape		1.780	1.300	1.080	1.080
Verical		FCD4N60TM	2,150	320					0.973	0.867
Arrow Electronics		FCD4N60TM	11	1		0.391	0.391	0.391	0.391	0.391
Rochester Electronics		FCD4N60TM	2,150					0.938	0.778	0.694	3h
DigiKey	3	FCD4N60TMCT-ND	3,396	1	Cut Tape	2.610	1.679	1.146	0.845	0.845

数据表和文档

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Newark

Datasheet0 页0 年前

Upverter

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+3.17%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

LTB Date2009-03-09

LTD Date2009-09-09

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCD4N60TM 的描述。

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

onsemi

N-Channel 600 V 3.9 A 1.2 Ohm Surface Mount SuperFET® Mosfet - TO-252-3

Future Electronics

MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:3.9A; On State Resistance Max:1.2ohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:11.7A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor