供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-10-27
LTD Date2012-04-27
相关零件
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
InfineonIPD30N03S2L10ATMA1
30V, N-Ch, 10 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
描述
由其分销商提供的 STMicroelectronics STD50N03L 的描述。
Trans MOSFET N-CH 30V 40A 3-Pin (2+Tab) DPAK T/R
Power Field-Effect Transistor, 40A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFET Transistors POWER MOSFET
N-Channel- 30V- 0.009Ohm- 50A-DPAK/IPAK
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.434 nF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation60 W
Rds On Max10.5 mΩ
Resistance10.5 MΩ
Rise Time125 ns
Turn-Off Delay Time24 ns