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描述
由其分销商提供的 Diodes Inc. DMN3010LK3-13 的描述。
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Power MOSFET, N Channel, 30 V, 43 A, 0.008 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 30V 13.1A 3-Pin(2+Tab) DPAK T/R
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=30 V, 43 A, DPAK (TO-252), , 3
Power Field-Effect Transistor, 13.1A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Capacitance2.075 nF
Continuous Drain Current (ID)13.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.075 nF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max9.5 mΩ
Rise Time19.6 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time4.5 ns