数据表和文档
下载 STMicroelectronics STD26NF10 的数据表和制造商文档。
官方数据表2 年前
备用零件
Price @ 1000
$ 0.746
$ 0.577
Stock
254,388
3,207,658
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
25 A
25 A
Threshold Voltage
-
2 V
Rds On Max
38 mΩ
38 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
100 W
Input Capacitance
1.55 nF
1.55 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-23
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
STMicroelectronicsSTD25NF10T4
N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
STMicroelectronicsSTD25NF10LA
N-channel 100 V, 0.030 Ohm, 25 A, DPAK STripFET(TM) II Power MOSFET
描述
由其分销商提供的 STMicroelectronics STD26NF10 的描述。
Power MOSFET, N Channel, 100 V, 25 A, 0.033 ohm, TO-252 (DPAK), Surface Mount
Single N-Channel 100 V 100 W 55 nC Silicon Surface Mount Mosfet - TO-252-3
Trans MOSFET N-CH 100V 25A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Power MOSFET Transistors N Ch 100V 0.033 Ohm 25A
100V 25A 100W 38m´Î@10V12.5A 4V@250Ã×A N Channel TO-252-2(DPAK) MOSFETs ROHS
N-channel 100V - 0.033Ohm - 25A - DPAK
N-Ch 100V 25A 100W 0,038R TO252
Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
100W(Tc) 20V 4V@ 250¦ÌA 55nC@ 10 V 1N 100V 38m¦¸@ 12.5A,10V 25A 1.55nF@25V TO-252 6.6mm*6.2mm*2.4mm
Automotive Power Discrete, 100V, 25A, DPAK, Tape and Reel
STMicroelectronics SCT
Mosfet, N-Ch, 100V, 25A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD26NF10
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max38 mΩ
Resistance38 MΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns