供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-02-25
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
描述
由其分销商提供的 onsemi FDD3860 的描述。
In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor
PowerTrench® MOSFET, N-Channel, 100 V, 29 A, 36 mΩ
N-Channel 100 V 36 mOhm Surface Mount PowerTrench Mosfet - DPAK-3
Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.75 W
Rds On Max36 mΩ
Resistance36 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3.8 V
Turn-Off Delay Time24 ns
Turn-On Delay Time16 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm