备用零件
Price @ 1000
$ 0.577
$ 0.766
Stock
2,264,672
1,142,632
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
25 A
25 A
Threshold Voltage
2 V
-
Rds On Max
38 mΩ
38 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
100 W
Input Capacitance
1.55 nF
1.55 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
STMicroelectronicsSTD70N10F4
N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
描述
由其分销商提供的 STMicroelectronics STD25NF10T4 的描述。
N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
STD25NF10T4 N-CHANNEL MOSFET TRANSISTOR, 25 A, 100 V, 3-PIN DPAK
MOSFET N-CH 100V 25A DPAK / Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R
N-channel 100 V, 0.033 Ohm typ., 25 A StripFET Power MOSFET in DPAK package
Ciiva
N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
STMicroelectronics NChannel EnhancedMOSTube STripFET IIseries, Vds=100 V, 25 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Mosfet, N Channel, 100V, 25A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:12.5A; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):33Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD25NF10T4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max38 mΩ
Resistance38 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm