备用零件
Price @ 1000
$ 0.538
$ 0.31
$ 0.31
Stock
2,304,125
5,465,351
5,465,351
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-252
DPAK
DPAK
Drain to Source Voltage (Vdss)
60 V
55 V
55 V
Continuous Drain Current (ID)
24 A
17 A
17 A
Threshold Voltage
2.5 V
2 V
2 V
Rds On Max
40 mΩ
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
18 V
16 V
16 V
Power Dissipation
60 W
38 W
38 W
Input Capacitance
660 pF
480 pF
480 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD30NF06LT4
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
描述
由其分销商提供的 STMicroelectronics STD20NF06LT4 的描述。
Trans MOSFET N-CH 60V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 24A DPAK
N-CHANNEL 60V - 0.032 - 24A STripFET™ II MOSFET
STD20NF06LT4 N-CHANNEL MOSFET TRANSISTOR, 24 A, 60 V, 3-PIN DPAK
Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 24A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissi
Mosfet, N, Logic, D-Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:24A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):32Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:2.5V |Stmicroelectronics STD20NF06LT4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)18 V
Input Capacitance660 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
PackagingTape and Reel
Power Dissipation60 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)60 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm