onsemi FDD5612

Name: onsemi FDD5612
Brand: onsemi
SKU: FDD5612

N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Farnell	FDD5612	0	1		1.293*	1.168*	0.933*	0.488*	0.479*	1d
element14 APAC	FDD5612	0	1		1.089*	0.860*	0.729*	0.533*	0.508*	22h
Component Stockers USA	FDD5612	381			99.990	99.990	99.990	99.990	99.990	23h
Weyland Electronics Group Pte. Ltd.	FDD5612	722	1	Tape & Reel	0.826	0.826	0.826	0.826	0.826	11h
Win Source	WS-FDD5612	10,000	40				1.325	1.102	1.102	10h

数据表和文档

下载 onsemi FDD5612 的数据表和制造商文档。

Upverter

Technical Drawing1 页3 年前

Datasheet8 页5 年前

IHS

element14 APAC

Future Electronics

onsemi

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-01-04

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-01-31

LTD Date2023-01-31

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDD5612 的描述。

N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ

onsemi

N-Channel 60 V 55 mOhm Surface Mount PowerTrench Mosfet - TO-252-3

Future Electronics

Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-252; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor