价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STD30NF06LT4 | 200,827 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STD30NF06LT4 | 8,350 | 1 | |||||||||
| Verical | STD30NF06LT4 | 12,500 | 2500 | |||||||||
| Future Electronics | STD30NF06LT4 | 70,000 | 2500 | Tape & Reel | ||||||||
| TME | STD30NF06LT4 | 1,637 | 1 | 19h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
InfineonIPD053N06NATMA1
3KW 20V 2.8V(Typ) 27nC@ 10V 1N 60V 5.3m¦¸@ 10V 2nF@ 30V TO-252 6.5mm*622cm*2.51mm
InfineonIPD088N06N3GBTMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount
描述
由其分销商提供的 STMicroelectronics STD30NF06LT4 的描述。
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 60V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 35A DPAK
STD30NF06LT4 N-CHANNEL MOSFET TRANSISTOR, 35 A, 60 V, 3-PIN DPAK
Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:2.5V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:70W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:30A; Package / Case:DPAK; Power Dissipation Pd:70W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 35 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 70
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation70 W
Manufacturer Package IdentifierDPAK_P032P
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)60 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm