供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2013-06-25
LTD Date2013-12-25
相关零件
STMicroelectronicsSTD12NF06L-1
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
onsemiHUF76407D3
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A IPAK
描述
由其分销商提供的 STMicroelectronics STD10PF06-1 的描述。
Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube
Power MOSFET Transistors P-Ch 60 Volt 10 Amp
10 A 60 V 0.2 ohm P-CHANNEL Si POWER MOSFET TO-251AA
Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Current Rating-10 A
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance850 pF
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation40 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-60 V
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm