供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2007-04-06
LTD Date2007-10-06
相关零件
onsemiNTD3055L170-001
MOSFET N-Channel 60V 9A 170mΩ@4.5A,5V 2V@250µA 10nC@5V 275pF@25V 1.5W(Ta) 28.5W(Tj) TO-251 TH
描述
由其分销商提供的 onsemi RFD3055 的描述。
MOSFETs Power MOSFET N-Ch 60V/12a/0.150 Ohm
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
53W(Tc) 20V 4V@ 250µA 23nC@ 20 V 1individualNChannel 60V 150mΩ@ 12A,10V 12A 300pF@25V TO-251 Through hole mounting 6.8mm*2.5mm*6.3mm
MOSFET; Leaded Process Compatible:No; Mounting Type:Through Hole; Package/Case:TO-251AA; Peak Reflow Compatible (260 C):No; Transistor Polarity:N Channel; Current Rating:12A; Voltage Rating:60V RoHS Compliant: No
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance300 pF
Max Operating Temperature175 °C
Max Power Dissipation53 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation53 W
Rds On Max150 mΩ
Rise Time21 ns
Turn-Off Delay Time16 ns
Voltage Rating (DC)60 V