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onsemiHUF76407D3
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A IPAK
描述
由其分销商提供的 STMicroelectronics STD12NF06L-1 的描述。
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube
Power MOSFET Transistors N-Ch 60 Volt 12 Amp
Res Thick Film 2010 2.2K Ohm 5% 0.75W(3/4W) ±200ppm/C Molded SMD Automotive Embossed Plastic T/R
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Power MOSFETs, 60V, 12A, IPAK, Tube
STMicroelectronics SCT
MOSFET, N-CH, 60V, 12A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance350 pF
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm