供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
相关零件
STMicroelectronicsSTD12NF06L-1
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
描述
由其分销商提供的 onsemi FQU17P06TU 的描述。
Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK
60V P-CHANNEL MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.11Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: Yes
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance135 mΩ
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max135 mΩ
Resistance135 MΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height7.57 mm
Length6.8 mm