价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB60NF10T4 | 0 | 1 | 1d | ||||||||
| Microchip USA | STB60NF10T4 | 183 | 3K | Tray | 20h | |||||||
| Win Source | WS-STB60NF10T4 | 130 | 65 | 4h | ||||||||
| Worldway Electronics | STB60NF10T4 | 14,300 | 7 | Tape & Reel | 3h | |||||||
| GreenTree Electronics | STB60NF10T4 | 1,000 | 1d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-02
LTD Date2021-04-02
相关零件
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描述
由其分销商提供的 STMicroelectronics STB60NF10T4 的描述。
STB60NF10T4 N-channel MOSFET Transistor, 80 A, 100 V, 3-Pin D2PAK
N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time56 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time82 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm