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描述
由其分销商提供的 STMicroelectronics STB130N6F7 的描述。
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
MOSFET N-CH 60V 80A F7 D2PAK / Low Crss/Ciss ratio for EMI immunity
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-263AB
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STMicroelectronics SCT
场效应管, MOSFET, N沟道, 60V, 80A, 175度 C, 160W;
MOSFET, N-CH, 60V, 80A, 175DEG C, 160W;
160W(Tc) 20V 4V@ 250µA 42nC@ 10 V 1individualNChannel 60V 5mΩ@ 40A,10V 80A 2.6nF@25V TO-263 SMD mount 4.6mm(height)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vds)60 V
Input Capacitance2.6 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max5 mΩ
Schedule B8541290080