Infineon IPB90N06S4L04ATMA2

Name: Infineon IPB90N06S4L04ATMA2
Brand: Infineon
SKU: IPB90N06S4L04ATMA2

Power MOSFET, N Channel, 60 V, 90 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount

$ 1.109

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Distributor		SKU		Min	Pkg
Newark		IPB90N06S4L04ATMA2	1,385	1	Cut Tape	3.240	2.100	1.460	1.240	1.240
Arrow Electronics	2	IPB90N06S4L04ATMA2	1,000	1		1.109	1.109	1.109	1.109	1.109
Rochester Electronics		IPB90N06S4L04ATMA2	1,464					1.330	1.100	0.984	19h
DigiKey	3	448-IPB90N06S4L04ATMA2CT-ND	3,812	1	Cut Tape	3.370	2.188	1.516	1.229	1.229
Future Electronics		IPB90N06S4L04ATMA2	0	1K	Tape & Reel				1.030	1.010

数据表和文档

下载 Infineon IPB90N06S4L04ATMA2 的数据表和制造商文档。

Newark

Datasheet9 页17 年前

库存历史记录

3 个月趋势:

+33.35%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-03-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2016-12-01

LTD Date2017-06-01

描述

由其分销商提供的 Infineon IPB90N06S4L04ATMA2 的描述。

Power MOSFET, N Channel, 60 V, 90 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

60V, N-Ch, 3.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Verical

N-Channel 60 V 3.4 mOhm 170 nC OptiMOS®-T2 Power-Transistor -PG-TO263-3-2

Future Electronics

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IPB90N06S4L04ATMA2.

Newark

Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon