STMicroelectronics STB100N6F7

Name: STMicroelectronics STB100N6F7
Brand: STMicroelectronics
SKU: STB100N6F7

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

$ 0.777

EOL

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Distributor		SKU		Min	Pkg
Arrow Electronics		STB100N6F7	2,000	1K					0.773	0.658
Verical		STB100N6F7	2,000	1K					0.780	0.647
DigiKey	3	497-15894-1-ND	1,000	1	Cut Tape	2.340	1.498	1.017	0.811	0.811
TME	2	STB100N6F7-STM-0	2,000	1K					0.860	0.860	19h
Avnet		STB100N6F7	0	2K						0.586	4d

数据表和文档

下载 STMicroelectronics STB100N6F7 的数据表和制造商文档。

STMicroelectronics

Datasheet15 页13 年前

Future Electronics

库存历史记录

3 个月趋势:

+28.10%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-01-16

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-14

LTD Date2027-03-14

描述

由其分销商提供的 STMicroelectronics STB100N6F7 的描述。

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

STMicroelectronics

Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

Verical

Single N-Channel 60 V 5.6 mOhm 30 nC 125 W Silicon SMT Mosfet - TO-263-3

Future Electronics

MOSFET N-CH 60V 100A F7 D2PAK / High avalanche ruggedness

Win Source

MOSFET, N-CH, 60V, 100A, 125W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell