备用零件
Price @ 1000
$ 6.85
$ 5.466
Stock
284,947
236,124
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vds)
40 V
40 V
Continuous Drain Current (ID)
2.5 A
2.5 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
31.7 W
31.7 W
Input Capacitance
-
-
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描述
由其分销商提供的 STMicroelectronics PD55003-E 的描述。
PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Frequency500 MHz
Gain14 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power3 W
Max Power Dissipation31.7 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage12.5 V
Output Power3 W
Power Dissipation31.7 W
Power Gain14 dB
Schedule B8541290080
Test Current50 mA
Test Voltage12.5 V
Voltage Rating40 V
Voltage Rating (DC)40 V
Dimensions
Height3.5 mm
Length7.5 mm
Width9.4 mm