Infineon IRF7309TRPBF

Name: Infineon IRF7309TRPBF
Brand: Infineon
SKU: IRF7309TRPBF

Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

$ 0.402

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Distributor		SKU		Min	Pkg
Avnet	2	IRF7309TRPBF	4,000	4K						0.259	19h
Newark		IRF7309TRPBF	5,469	1	Cut Tape	1.380	0.907	0.633	0.478	0.478
Arrow Electronics	3	IRF7309TRPBF	3,643	1		0.248	0.241	0.236	0.236	0.236
Future Electronics	2	IRF7309TRPBF	124,000	4K	Tape & Reel					0.300
Rutronik		TMOSP11870	12,000	4K						0.267	1d

数据表和文档

下载 Infineon IRF7309TRPBF 的数据表和制造商文档。

Newark

Datasheet11 页19 年前

element14 APAC

Arrow Electronics

iiiC

Jameco

库存历史记录

3 个月趋势:

+8.15%

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供应链

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IRF7309TRPBF 的描述。

Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R

Verical

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4 A, 4 A, 0.05 ohm

Avnet

Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Channel Type:Dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:3A; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies IRF7309TRPBF.

Newark

Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 4.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.4

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