onsemi MUN5314DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm

MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

MUN5314DW1T1G NPN+PNP DIGI TRANSISTOR,100 MA 50V 10 KOHM, RATIO OF.21,6-PIN SC-88

80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Complementary Bipolar Digital Transistor (BRT)

Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Base Emitter Resistor R2:47Kohm Rohs Compliant: Yes |Onsemi MUN5314DW1T1G.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.