onsemi MUN5213DW1T1G

Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Dual NPN Bipolar Digital Transistor (BRT)

MUN Series 50 V 100 mA 47 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

MUN5213DW1T1G NPN DIGI TRANSISTOR, 100MA 50 V 47 KOHM, RATIO OF 1, 6-PIN SC-88

250mV@ 300¦ÌA,10mA 2 NPN - Pre-Biased (Dual) 385mW 5V 500nA 50V 50V 100mA 2mm*1.25mm*1.1mm

2 NPN pre-biased (Dual) 187mW 100mA 50V SC-70-6(SOT-363) Digital Transistors ROHS

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

Bipolar Pre-Biased/Digital Transistor, 50 V, 100 Ma, 47 Kohm, 47 Kohm, 1, Sot-363 Rohs Compliant: Yes |Onsemi MUN5213DW1T1G

BRT TRANSISTOR, 50V, 47K/47KOHM, SC88; C; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47koh

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.