onsemi MUN5211DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm

Bipolar Transistors (BJT); MUN5211DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

MUN5211DW1T1G NPN DIGI TRANSISTOR, 100MA 50 V 10 KOHM, RATIO OF 1, 6-PIN SC-88

MUN5211DW1 Series 2 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363

35@5mA,10V 2 NPN - Pre-Biased 187mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-363, FULL REEL; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; MSL:-

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.