onsemi MUN5312DW1T1G

MUN Series 50 V 100 mA 22 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

MUN5312DW1T1G NPN+PNP DIGI TRANSISTOR,100MA 50V 22 KOHM, RATIO OF 1,6-PIN SC-88

60@5mA,10V 1 NPN - Pre-Biased,1 PNP - Pre-Biased 187mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R

Complementary Bipolar Digital Transistor (BRT)

BRT TRANSISTOR, AEC-Q101, 50V, 22K/22K; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resis

Brt Transistor, 50V, 22K/22Kohm, Sot-363, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5312DW1T1G.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.