onsemi MUN5330DW1T1G

ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363

NPN AND PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

MUN Series 50 V 100 mA 1 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R

Complementary Bipolar Digital Transistor (BRT)

250mV@ 5mA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 385mW 6V 500nA 50V 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm

Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:1Kohm; Base Emitter Resistor R2:1Kohm Rohs Compliant: Yes |Onsemi MUN5330DW1T1G.

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.