onsemi MUN5212DW1T1G

Name: onsemi MUN5212DW1T1G
Brand: onsemi
SKU: MUN5212DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

$ 0.064

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Distributor		SKU		Min	Pkg
Avnet	2	MUN5212DW1T1G	2,995	24K							15h
Newark	2	MUN5212DW1T1G	2,665	5	Cut Tape		0.159	0.104	0.071	0.071
Verical		MUN5212DW1T1G	18,000	9678						0.039
Arrow Electronics		MUN5212DW1T1G	225	1		0.235	0.144	0.091	0.091	0.091
Rochester Electronics		MUN5212DW1T1G	24,000					0.037	0.031	0.028	13h

数据表和文档

下载 onsemi MUN5212DW1T1G 的数据表和制造商文档。

IHS

Datasheet11 页8 年前

Master Electronics

element14 APAC

Newark

element14

库存历史记录

3 个月趋势:

-33.43%

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onsemiMUN5212DW1T1G

onsemiMUN5212DW1T1

Price @ 1000

$ 0.064

$ 0.055

Stock

2,181,834

655,757

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-363-6

Polarity

NPN

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

Power Dissipation

187 mW

250 mW

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-11-25

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MUN5212DW1T1G 的描述。

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

IHS

Dual NPN Bipolar Digital Transistor (BRT)

onsemi

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

2 NPN pre-biased (Dual) 256mW 100mA 50V SOT-363 Digital Transistors ROHS

Dasenic

MUN5212DW1 Series 1.9 V SMT NPN-Pre-Biased Digital Transistor - SOT-363

Future Electronics

Brt Transistor, 50Vdc, 22K/22K, Sot-363; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5212DW1T1G.

Newark

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

North Star Micro